20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 irfp440r, irfp441r, irfp442r, irfp443r avalanche energy rated n-channel power mosfets 8a and 7a, 500v-400v ros(on) = 0.85o and 1.1o features: ? single pulse avalanche energy rated ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance n-channel enhancement mode d the irfp440r, irfp441r, irfp442r and irfp443r are advanced power mosfets designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. these are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can bo operated directly from integrated circuits. the irfp-types are supplied in the jedec to-247 plastic, package. absolute maximum ratings terminal diagram terminal designation top view jeoec to-247 parameter vm drain - source voltage ? vocb drain - gate voltage (rus = 20 ko) cd lo @ tc = 25c continuous drain current id @ tc = 100c continuous drain current lou pulsed drain current @ vas gate - source voltage po @ tc = 25c max. power dissipation linear derating factor em, single pulse avalanche energy rating ? tj operating junction and t.ij storage temperature flange lead temperature irfp44cr 500 500 8.0 5.0 32 irfp441r 450 450 8.0 5.0 32 irfp442r 500 500 7.0 4.0 28 irfp443r 450 450 7.0 4.0 28 20 125 (see fig. 14) 1.0 (see fig. 14) 480 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) units v v a a a v w w/c mj c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irfp440r, irfp441r, irfp442r, irfp443r electrical characteristics @ tc = 25 c (unless otherwise specified) pwmut bvn. drain ? source breakdown voltage vomm gate threshold voltage ion qate-source leakage forward ion oato-source leakage reverse loo z?ro qata voltage drain current ln? on-state drain current ? rck? static drain-source on-state resistance? n> forward trantconduclance ? c. input capacttance co. output capacitance cm revert; transfer capacitance torn turn-on delay time l rlae time u?i turn-off delay time ti fall time q, total gate charfle (qate-source plus qate-oraln) of gate-source charge qan gate-drain ("miller") charge lo internal drain inductance u internal source inductance type irfp440r irfp442r irfp441r irfp443r all all all all irfp440r irfp441r irfp442r irfp443r irfp440r irfp441r ififp442r irfp443r all all all all all all all all all all all all all mb. 500 480 2.0 ? ? ? ? 8.0 7.0 - - 4.0 _ ? _ ? ? ? ? - ? _ tvd. - - ? ? _ ? - - u 1.0 6.5 1225 200 85 17 5 42 14 42 20 22 5.0 12.5 max. - - 4.0 100 -100 250 1000 - - 0.86 1.1 ? _ ? ? 35 15 _ 90 30 80 ? ? unto v v v na na ?a m a a a a s(0) pf f>f pf ni n? na ns nc nc nc nh nh test condntons vm-ov b = 2500a vn. = vm.ld = 25qua v? = 20v vo. = -20v vn = max. rating. vm = 0v vn - max. rating x 0.8, vo, = 0v, to = 125c vd. > low! x rom n^. v? - 10v v?=10v, id?4.0a vtx > idim x rmimct,. le see fig. 10 = 4.0a .0mhz voe - 200v, lo = 4.0a. ze = 4.70 see fig. 17 (mosfet twitching tlmea are etaentlally independent of operating temperature.) vai=10v, lo = 10a,v[? = see fig. 18 tor teat circuit etaentlally independent o temperature.) measured between the contact screw on header that is closer to source and gate pins and center of dte. measured from the source pin, 6 mm (0.25 in.) from header and source bonding pad. = 0.8 max rating. (gate charge la operating modified mosfet symbol showing the internal device - inductances o thermal resistance r*jc junctiorhojcase r?cs case-to-sink fuja junction-to-ambient all all all _ _ - .... 0.1 ? 1.0 _ 30 "cm c/w c/w mounting surface flat, smooth, and greased. free air operation source-drain diode rating* and characteristics is continuous source current (body diode) isu pulse source current (body diode) ? vso diode forward voltage ? t. reverse recovery time qm reverse recovered charge t?< forward tum-on time irfp440r irfp441r ihfp442r irfp443r ihfp440r irfp441r irfp442r irfp443r irfp440r ififp441h irfp442r ififp443r all all all - - - - - - ^. ? - - - - - - 1100 6.4 8.0 7.0 32 28 2.0 1.9 _ ? a a a a v v ns tic modified mosfet symbol showing the integral reverse p-n junction rectifier. o tc = 25c. is = 8.0a vqb = 0v tc = 2sc, is = 7.0a, vqs = 0v tj = 150"c. u = 8.0a, dwdt = 100a/^s tj = 150c, b = 8.0a, dwdt = 100a/^s intrinsic turn-on time la negligible. tum-on speed is substantially controlled by u + lo. q tj = 25c to 150c. ?pube test: pulse width <300ps. duty cycles 2*. ? repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (fig. 5). ? voo = 50v. starting tj = 25c. l = 11 rnh. r.. == sco. l_ = 8.8a. see figures 15.16.
|
